Technical parameters/rated power: 1.35 W
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 650 mW
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 2V
Technical parameters/rated power (Max): 1 W
Technical parameters/DC current gain (hFE): 100
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.7 mm
External dimensions/width: 3.7 mm
External dimensions/height: 1.7 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power management, industrial, automotive applications
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCP52-16
|
Nexperia | 功能相似 | SOT-223 |
低功率PNP晶体管 LOW POWER PNP TRANSISTOR
|
||
BCP52-16
|
Infineon | 功能相似 | SOT-223-4 |
低功率PNP晶体管 LOW POWER PNP TRANSISTOR
|
||
BCP52-16
|
Philips | 功能相似 | SOT-223 |
低功率PNP晶体管 LOW POWER PNP TRANSISTOR
|
||
BCP5216TA
|
Diodes | 功能相似 | TO-261-4 |
三极管
|
||
BCP52TA
|
Diodes | 功能相似 | TO-261-4 |
三极管(BJT) BCP52TA SOT-223
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review