Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 7 Ω
Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 110pF @25V(Vds)
Technical parameters/descent time: 15 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.65 mm
External dimensions/packaging: SOIC-8
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TC6320TG-G
|
Supertex | 功能相似 | SOIC-8 |
MICROCHIP TC6320TG-G 场效应管, MOSFET, N沟道与P沟道, 200V, NSOIC-8 新
|
||
TC6320TG-G
|
Microchip | 功能相似 | SOIC-8 |
MICROCHIP TC6320TG-G 场效应管, MOSFET, N沟道与P沟道, 200V, NSOIC-8 新
|
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