Technical parameters/number of channels: | 2 |
|
Technical parameters/drain source resistance: | 7.00 Ω, 8.00 Ω |
|
Technical parameters/polarity: | N-Channel, P-Channel |
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Technical parameters/drain source voltage (Vds): | 200 V |
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Technical parameters/Leakage source breakdown voltage: | 200 V |
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Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SOIC-8 |
|
Dimensions/Width: | 3.9 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
Customs information/HTS code: | 8541900000 |
|
Customs Information/Hong Kong Import and Export License: | NLR |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TC6320TG-G
|
Supertex | 功能相似 | SOIC-8 |
MICROCHIP TC6320TG-G 场效应管, MOSFET, N沟道与P沟道, 200V, NSOIC-8 新
|
||
TC6320TG-G
|
Microchip | 功能相似 | SOIC-8 |
MICROCHIP TC6320TG-G 场效应管, MOSFET, N沟道与P沟道, 200V, NSOIC-8 新
|
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