Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 45.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 254 W
Technical parameters/threshold voltage: 3.5 V
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/leakage source breakdown voltage: 40.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 136 A
Technical parameters/rise time: 65 ns
Technical parameters/Input capacitance (Ciss): 7000pF @32V(Vds)
Technical parameters/descent time: 85 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 5.4W (Ta), 254W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.29 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTB5405NT4G
|
ON Semiconductor | 类似代替 | TO-263-3 |
N 通道功率 MOSFET，40V，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
|
||
NTP125N02RG
|
ON Semiconductor | 功能相似 | TO-220-3 |
125A,24V功率MOSFET
|
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