Technical parameters/rated voltage (DC): 24.0 V
Technical parameters/rated current: 125 A
Technical parameters/drain source resistance: 3.70 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.98W (Ta), 113.6W (Tc)
Technical parameters/drain source voltage (Vds): 24 V
Technical parameters/leakage source breakdown voltage: 24.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 125 A
Technical parameters/rise time: 39.0 ns
Technical parameters/Input capacitance (Ciss): 3440pF @20V(Vds)
Technical parameters/rated power (Max): 1.98 W
Technical parameters/dissipated power (Max): 1.98W (Ta), 113.6W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTB5405NT4G
|
ON Semiconductor | 功能相似 | TO-263-3 |
N 通道功率 MOSFET,40V,ON Semiconductor ### MOSFET 晶体管,ON Semiconductor
|
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