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Model NTB23N03R
Description 23A,25VPower MOSFET
Product QR code
Brand: ON Semiconductor
Packaging TO-263-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
1.02  yuan 1.02yuan
5+:
$ 1.3730
25+:
$ 1.2713
50+:
$ 1.2001
100+:
$ 1.1696
500+:
$ 1.1492
2500+:
$ 1.1238
5000+:
$ 1.1136
10000+:
$ 1.0984
Quantity
5+
25+
50+
100+
500+
Price
$1.3730
$1.2713
$1.2001
$1.1696
$1.1492
Price $ 1.3730 $ 1.2713 $ 1.2001 $ 1.1696 $ 1.1492
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5259) Minimum order quantity(5)
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Technical parameters/rated voltage (DC): 25.0 V

Technical parameters/rated current: 23.0 A

Technical parameters/drain source resistance: 32.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 37.5 W

Technical parameters/input capacitance: 225 pF

Technical parameters/gate charge: 3.76 nC

Technical parameters/drain source voltage (Vds): 25 V

Technical parameters/leakage source breakdown voltage: 25.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 23.0 A

Technical parameters/Input capacitance (Ciss): 225pF @20V(Vds)

Technical parameters/rated power (Max): 37.5 W

Technical parameters/dissipated power (Max): 37.5 W

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Contains Lead

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NTB23N03RT4 NTB23N03RT4 ON Semiconductor 类似代替 TO-263-3
功率MOSFET 23安培， 25伏特N沟道D2PAK Power MOSFET 23 Amps, 25 Volts N−Channel D2PAK
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