Technical parameters/rated voltage (DC): 25.0 V
Technical parameters/rated current: 23.0 A
Technical parameters/drain source resistance: 32.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 37.5 W
Technical parameters/drain source voltage (Vds): 25.0 V
Technical parameters/leakage source breakdown voltage: 25.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 23.0 A
Technical parameters/rise time: 14.9 ns
Technical parameters/descent time: 2 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTB23N03R
|
ON Semiconductor | 类似代替 | TO-263-3 |
23A,25V功率MOSFET
|
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