Technical parameters/dissipated power: 3.75W (Ta), 83W (Tc)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Input capacitance (Ciss): 1000pF @10V(Vds)
Technical parameters/dissipated power (Max): 3.75W (Ta), 83W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUD40N02-3M3P-E3
|
Vishay Semiconductor | 功能相似 |
MOSFET N-CH 20V 24.4A TO252
|
|||
|
|
VISHAY | 功能相似 | TO-252-3 |
MOSFET N-CH 20V 24.4A TO252
|
||
SUD40N02-3M3P-E3
|
Vishay Siliconix | 功能相似 | TO-252-3 |
MOSFET N-CH 20V 24.4A TO252
|
||
SUD42N03-3M9P-GE3
|
Vishay Siliconix | 功能相似 | TO-252-3 |
MOSFET N-CH 30V 42A TO252
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review