Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.75W (Ta), 227W (Tc)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 85.0 A
Technical parameters/Input capacitance (Ciss): 4660pF @50V(Vds)
Technical parameters/dissipated power (Max): 3.75W (Ta), 227W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF2807PBF
|
Infineon | 功能相似 | TO-220-3 |
INFINEON IRF2807PBF 晶体管, MOSFET, N沟道, 71 A, 75 V, 13 mohm, 10 V, 4 V
|
||
IRF2807PBF
|
International Rectifier | 功能相似 | TO-220-3 |
INFINEON IRF2807PBF 晶体管, MOSFET, N沟道, 71 A, 75 V, 13 mohm, 10 V, 4 V
|
||
IRFZ48VPBF
|
International Rectifier | 功能相似 | TO-220-3 |
INFINEON IRFZ48VPBF 晶体管, MOSFET, N沟道, 72 A, 60 V, 12 mohm, 10 V, 4 V
|
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