Technical parameters/drain source resistance: 21 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 2.4 W
Technical parameters/drain source voltage (Vds): 150 V
Technical parameters/Continuous drain current (Ids): 85A
Technical parameters/rise time: 170 ns
Technical parameters/Input capacitance (Ciss): 4750pF @25V(Vds)
Technical parameters/rated power (Max): 2.4 W
Technical parameters/descent time: 170 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2400 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Packaging Methods: Tube
Other/Minimum Packaging: 50
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUP85N15-21
|
Vishay Siliconix | 功能相似 | TO-220 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
|
||
SUP85N15-21
|
Vishay Semiconductor | 功能相似 | TO-220 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
|
||
SUP90N15-18P-E3
|
Vishay Semiconductor | 类似代替 | TO-220 |
MOSFET N-CH 150V 90A TO220AB
|
||
SUP90N15-18P-E3
|
VISHAY | 类似代替 | TO-220-3 |
MOSFET N-CH 150V 90A TO220AB
|
||
SUP90N15-18P-E3
|
Vishay Siliconix | 类似代替 | TO-220-3 |
MOSFET N-CH 150V 90A TO220AB
|
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