Technical parameters/drain source resistance: 0.018 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 375 W
Technical parameters/threshold voltage: 2.5 V
Technical parameters/drain source voltage (Vds): 150 V
Technical parameters/Continuous drain current (Ids): 90.0 A
Technical parameters/rise time: 10 ns
Technical parameters/Input capacitance (Ciss): 4180pF @75V(Vds)
Technical parameters/descent time: 8 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 375 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/length: 10.51 mm
External dimensions/width: 4.65 mm
External dimensions/height: 15.49 mm
External dimensions/packaging: TO-220
Physical parameters/operating temperature: -55℃ ~ 175℃
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUP85N15-21-E3
|
Vishay Siliconix | 类似代替 | TO-220-3 |
Trans MOSFET N-CH 150V 85A 3Pin(3+Tab) TO-220AB
|
||
SUP85N15-21-E3
|
VISHAY | 类似代替 | TO-220-3 |
Trans MOSFET N-CH 150V 85A 3Pin(3+Tab) TO-220AB
|
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