Technical parameters/dissipated power: 3.75W (Ta), 272W (Tc)
Technical parameters/Input capacitance (Ciss): 4700pF @30V(Vds)
Technical parameters/dissipated power (Max): 3.75W (Ta), 272W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SK3271-01
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FUJI | 功能相似 | TO-220 |
TO-3P N-CH 60V 100A
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Infineon | 功能相似 | TO-262 |
的OptiMOS -T电源晶体管 OptiMOS-T Power-Transistor
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Vishay Semiconductor | 功能相似 |
Power Field-Effect Transistor, 70A I(D), 60V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
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SK32
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Micro Commercial Components | 功能相似 | DO-214AB |
Power Field-Effect Transistor, 70A I(D), 60V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
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SK32
|
SynSemi | 功能相似 |
Power Field-Effect Transistor, 70A I(D), 60V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
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SK32
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Good-Ark Electronics | 功能相似 | SMC |
Power Field-Effect Transistor, 70A I(D), 60V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
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SK32
|
Diotec Semiconductor | 功能相似 | DO-214AB |
Power Field-Effect Transistor, 70A I(D), 60V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
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SK32
|
DC Components | 功能相似 |
Power Field-Effect Transistor, 70A I(D), 60V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
|
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