Technical parameters/forward voltage: | 1.00 V |
|
Technical parameters/drain source resistance: | 6.5 mΩ |
|
Technical parameters/polarity: | N-CH |
|
Technical parameters/dissipated power: | 155 W |
|
Technical parameters/Input capacitance: | 9000pF @25V |
|
Technical parameters/drain source voltage (Vds): | 60 V |
|
Technical parameters/Leakage source breakdown voltage: | 60 V |
|
Technical parameters/Continuous drain current (Ids): | 100A |
|
Technical parameters/rise time: | 200 ns |
|
Technical parameters/descent time: | 135 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-220 |
|
Dimensions/Length: | 15.5 mm |
|
Dimensions/Packaging: | TO-220 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Infineon | 功能相似 | TO-262 |
的OptiMOS -T电源晶体管 OptiMOS-T Power-Transistor
|
||
IPP100N06S3L-04
|
Infineon | 功能相似 | TO-220-3-1 |
的OptiMOS -T电源晶体管 OptiMOS-T Power-Transistor
|
||
SUP90N06-6M0P-E3
|
Vishay Siliconix | 功能相似 | TO-220-3 |
MOSFET N-CH 60V 90A TO220AB
|
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