Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Delete 동업체: Vishay
Other/Delete 품카테 High speed: MOSFETs
Other/Delete: General Purpose MOSFETs
Other/궟동: Single
Other/Case/Package: TO-220AB
Other/Soft 랜イ동터극동: N-Channel
Other/ハ레イ?동항복압: 30 V
Other/Link Files 레イ류: 70 A
Other/력발산: 93000 mW
Other/저항 Drain Source RDS (on): 0.009 Ohm @ 10 V
Other/Typical 하강: 9 ns
Other/Typical 상승: 8 ns
Other/표준오프い Contact Us: 25 ns
Other/ị동: TUBE
Other/게イSoft - ?동항복압: /- 20 V
Other/동대작동온도: 175 C
Other/π소작동온도: 55 C
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUP50N03-5M1P-GE3
|
VISHAY | 类似代替 | TO-220 |
MOSFET N-CH 30V 50A TO-220AB
|
||
SUP50N03-5M1P-GE3
|
Vishay Semiconductor | 类似代替 | TO-220 |
MOSFET N-CH 30V 50A TO-220AB
|
||
SUP70N03-09BP
|
Vishay Semiconductor | 功能相似 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
|
|||
SUP70N03-09P
|
Vishay Semiconductor | 功能相似 | TO-220 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
|
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