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Model SUP70N03-09P
Description NChannel 30-V (D-S), 175? C. PWM Optimization of MOSFET N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized
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Brand: Vishay Semiconductor
Packaging TO-220
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Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9750) Minimum order quantity(1)
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Technical parameters/drain source resistance: 9.00 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 93.0 W

Technical parameters/leakage source breakdown voltage: 30.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): -70.0 A to 70.0 A

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220

External dimensions/packaging: TO-220

Compliant with standards/RoHS standards: Non-Compliant

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