Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0067 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 300 W
Technical parameters/threshold voltage: 2.5 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/operating temperature (Max): 175 ℃
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263
External dimensions/packaging: TO-263
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AUIRFS4410Z
|
Infineon | 功能相似 | TO-263-3 |
Trans MOSFET N-CH 100V 97A Automotive 3Pin(2+Tab) D2PAK Tube
|
||
BUK768R1-100E
|
NXP | 功能相似 | SOT-404 |
N沟道的TrenchMOS标准水平FET N-channel TrenchMOS standard level FET
|
||
IRF540N
|
Infineon | 功能相似 | TO-220-3 |
TO-220AB N-CH 100V 33A
|
||
IRFS4410ZPBF
|
International Rectifier | 功能相似 | TO-263-3 |
INFINEON IRFS4410ZPBF 晶体管, MOSFET, N沟道, 75 A, 100 V, 7.2 mohm, 10 V, 4 V
|
||
SUM90N08-4M8P-E3
|
Vishay Semiconductor | 类似代替 |
MOSFET N-CH 75V 90A D2PAK
|
|||
|
|
VISHAY | 类似代替 | TO-263 |
MOSFET N-CH 75V 90A D2PAK
|
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