Technical parameters/drain source resistance: 0.0064 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 263 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 100A
Technical parameters/operating temperature (Max): 175 ℃
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-404
External dimensions/packaging: SOT-404
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: Exempt
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUM90N10-8M2P-E3
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Vishay Intertechnology | 功能相似 |
VISHAY SUM90N10-8M2P-E3 晶体管, MOSFET, N沟道, 90 A, 100 V, 6.7 mohm, 10 V, 2.5 V
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SUM90N10-8M2P-E3
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VISHAY | 功能相似 | TO-263-3 |
VISHAY SUM90N10-8M2P-E3 晶体管, MOSFET, N沟道, 90 A, 100 V, 6.7 mohm, 10 V, 2.5 V
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SUM90N10-8M2P-E3
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Vishay Semiconductor | 功能相似 | TO-263 |
VISHAY SUM90N10-8M2P-E3 晶体管, MOSFET, N沟道, 90 A, 100 V, 6.7 mohm, 10 V, 2.5 V
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SUM90N10-8M2P-E3
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Vishay Siliconix | 功能相似 | TO-263-3 |
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