Technical parameters/dissipated power: 8.3W (Ta), 136W (Tc)
Technical parameters/Input capacitance (Ciss): 4700pF @40V(Vds)
Technical parameters/dissipated power (Max): 8.3W (Ta), 136W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUD50P08-26-E3
|
VISHAY | 类似代替 | DPAK-252 |
MOSFET P-CH 80V 50A TO252
|
||
SUD50P08-26-E3
|
Vishay Semiconductor | 类似代替 |
MOSFET P-CH 80V 50A TO252
|
|||
SUD50P08-26-E3
|
Vishay Siliconix | 类似代替 | TO-252-3 |
MOSFET P-CH 80V 50A TO252
|
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