Technical parameters/polarity: P-CH
Technical parameters/drain source voltage (Vds): 80 V
Technical parameters/Continuous drain current (Ids): 12.9A
Technical parameters/rise time: 50 ns
Technical parameters/Input capacitance (Ciss): 5160pF @40V(Vds)
Technical parameters/descent time: 65 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 8300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: DPAK-252
External dimensions/packaging: DPAK-252
Compliant with standards/RoHS standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUD50P08-25L-E3
|
Vishay Semiconductor | 类似代替 | TO-252 |
MOSFET P-CH 80V 50A DPAK
|
||
SUD50P08-25L-E3
|
VISHAY | 类似代替 | TO-252-3 |
MOSFET P-CH 80V 50A DPAK
|
||
SUD50P08-25L-E3
|
Vishay Siliconix | 类似代替 | TO-252-3 |
MOSFET P-CH 80V 50A DPAK
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review