Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.75W (Ta), 375W (Tc)
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 110 A
Technical parameters/Input capacitance (Ciss): 13600pF @25V(Vds)
Technical parameters/dissipated power (Max): 3.75W (Ta), 375W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUM110N04-02L-E3
|
Vishay Semiconductor | 功能相似 | TO-263 |
MOSFET 40V 110A 437.5W 2.3mohm @ 10V
|
||
SUM110N04-2M3L-E3
|
Vishay Intertechnology | 功能相似 | D2PAK-2 |
Trans MOSFET N-CH 40V 110A 3Pin(2+Tab) D2PAK
|
||
SUM110N04-2M3L-E3
|
VISHAY | 功能相似 | TO-263 |
Trans MOSFET N-CH 40V 110A 3Pin(2+Tab) D2PAK
|
||
SUM110N04-2M3L-E3
|
Vishay Siliconix | 功能相似 | TO-263-3 |
Trans MOSFET N-CH 40V 110A 3Pin(2+Tab) D2PAK
|
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