Technical parameters/drain source resistance: 3 mΩ
Technical parameters/dissipated power: 3750 mW
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/rise time: 100 ns
Technical parameters/Input capacitance (Ciss): 13600pF @25V(Vds)
Technical parameters/rated power (Max): 3.75 W
Technical parameters/descent time: 200 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3750 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263
External dimensions/packaging: TO-263
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUM110N04-02L-E3
|
Vishay Semiconductor | 功能相似 | TO-263 |
MOSFET 40V 110A 437.5W 2.3mohm @ 10V
|
||
SUM110N04-2M3L-E3
|
Vishay Intertechnology | 功能相似 | D2PAK-2 |
Trans MOSFET N-CH 40V 110A 3Pin(2+Tab) D2PAK
|
||
SUM110N04-2M3L-E3
|
VISHAY | 功能相似 | TO-263 |
Trans MOSFET N-CH 40V 110A 3Pin(2+Tab) D2PAK
|
||
SUM110N04-2M3L-E3
|
Vishay Siliconix | 功能相似 | TO-263-3 |
Trans MOSFET N-CH 40V 110A 3Pin(2+Tab) D2PAK
|
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