Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Input capacitance (Ciss): 6500pF @25V(Vds)
Technical parameters/rated power (Max): 3.75 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263
External dimensions/packaging: TO-263
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Siliconix | 功能相似 | D2PAK |
N-Channel 40V (D-S) 200C MOSFET
|
||
SUM110N04-03-E3
|
Vishay Siliconix | 类似代替 | TO-263-3 |
Trans MOSFET N-CH 40V 110A 3Pin D2PAK
|
||
|
|
VISHAY | 类似代替 | D2PAK |
Trans MOSFET N-CH 40V 110A 3Pin D2PAK
|
||
SUM110N04-03-E3
|
Vishay Semiconductor | 类似代替 | TO-236 |
Trans MOSFET N-CH 40V 110A 3Pin D2PAK
|
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