Technical parameters/drain source resistance: 0.0056 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 437.5 W
Technical parameters/input capacitance: 8250pF @25V
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 110 A
Technical parameters/Input capacitance (Ciss): 8250pF @25V(Vds)
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.75W (Ta), 375W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Siliconix | 功能相似 | D2PAK |
N-Channel 40V (D-S) 200C MOSFET
|
||
SUM110N04-03P-E3
|
Vishay Siliconix | 类似代替 | TO-263-3 |
Mosfet n-Ch 40V 110A D2pak
|
||
SUM110N04-03P-E3
|
VISHAY | 类似代替 | TO-263 |
Mosfet n-Ch 40V 110A D2pak
|
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