Technical parameters/dissipated power: 3.13W (Ta), 312W (Tc)
Technical parameters/threshold voltage: 2.5 V
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Input capacitance (Ciss): 18800pF @20V(Vds)
Technical parameters/dissipated power (Max): 3.13W (Ta), 312W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUK762R0-40E
|
NXP | 功能相似 | TO-263 |
D2PAK N-CH 40V 120A
|
||
|
|
Nexperia | 功能相似 | SOT-404 |
NXP BUK762R9-40E 晶体管, MOSFET, N沟道, 100 A, 40 V, 2400 µohm, 10 V, 3 V
|
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