Technical parameters/drain source resistance: 0.00165 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 293 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 120A
Technical parameters/operating temperature (Max): 175 ℃
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263
External dimensions/packaging: TO-263
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: Exempt
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SQM120N04-1M9-GE3
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SUM110N04-2M1P-E3
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Vishay Semiconductor | 功能相似 | TO-252-3 |
VISHAY SUM110N04-2M1P-E3 晶体管, MOSFET, N沟道, 110 A, 40 V, 1.7 mohm, 10 V, 1.2 V
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SUM110N04-2M1P-E3
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Vishay Siliconix | 功能相似 | TO-263-3 |
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