Technical parameters/drain source resistance: 0.16 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 20 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 6.50 A
Technical parameters/Input capacitance (Ciss): 240pF @25V(Vds)
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.25W (Ta), 20W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RF1S640SM9A
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Vishay Semiconductor | 类似代替 | TO-252 |
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SUD50N03-16P-E3
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Vishay Semiconductor | 功能相似 |
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SUD50N03-16P-E3
|
Vishay Siliconix | 功能相似 | TO-252-3 |
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