Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 240pF @25V(Vds)
Technical parameters/rated power (Max): 1.25 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RF1S640SM9A
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Fairchild | 功能相似 | TO-263-3 |
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SUD06N10-225L-GE3
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Vishay Semiconductor | 类似代替 | TO-252 |
MOSFET N-CH 100V 6.5A DPAK
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SUD06N10-225L-GE3
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VISHAY | 类似代替 | TO-252-3 |
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SUD50N03-16P-E3
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Vishay Semiconductor | 功能相似 |
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SUD50N03-16P-E3
|
Vishay Siliconix | 功能相似 | TO-252-3 |
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