Technical parameters/drain source resistance: 0.125 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 20.8 W
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
VISHAY | 类似代替 | TO-252 |
MOSFET, P-Ch, Vds -60V, Vgs +/- 20V, Rds(on) 28mohm, Id -8.4A, TO-263, Pd 2W
|
||
SUD08P06-155L-E3
|
Vishay Siliconix | 类似代替 | TO-252-3 |
MOSFET, P-Ch, Vds -60V, Vgs +/- 20V, Rds(on) 28mohm, Id -8.4A, TO-263, Pd 2W
|
||
SUD08P06-155L-E3
|
Vishay Semiconductor | 类似代替 | TO-252 |
MOSFET, P-Ch, Vds -60V, Vgs +/- 20V, Rds(on) 28mohm, Id -8.4A, TO-263, Pd 2W
|
||
SUD08P06-155L-T4E3
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET P-CH 60V 8.4A DPAK
|
||
SUD08P06-155L-T4E3
|
Vishay Semiconductor | 完全替代 |
MOSFET P-CH 60V 8.4A DPAK
|
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