Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 0.125 Ω |
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Technical parameters/polarity: | P-CH |
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Technical parameters/dissipated power: | 25 W |
|
Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/Continuous drain current (Ids): | 8.4A |
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Technical parameters/rise time: | 14 ns |
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Technical parameters/Input capacitance (Ciss): | 450pF @25V(Vds) |
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Technical parameters/rated power (Max): | 2 W |
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Technical parameters/descent time: | 7 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2000 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252 |
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Dimensions/Packaging: | TO-252 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
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Customs Information/Hong Kong Import and Export License: | NLR |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Intertechnology | 类似代替 | TO-252 |
MOSFET P-CH 60V 8.4A DPAK
|
||
SUD08P06-155L-GE3
|
VISHAY | 类似代替 | TO-252-3 |
MOSFET P-CH 60V 8.4A DPAK
|
||
SUD08P06-155L-GE3
|
Vishay Semiconductor | 类似代替 | TO-252-3 |
MOSFET P-CH 60V 8.4A DPAK
|
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