Technical parameters/drain source resistance: 0.065 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 125 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/Continuous drain current (Ids): 15.0 A
Technical parameters/rise time: 15.7 ns
Technical parameters/Input capacitance (Ciss): 1597pF @25V(Vds)
Technical parameters/rated power (Max): 125 W
Technical parameters/descent time: 8.8 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 125W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFP250NPBF
|
IXYS Semiconductor | 功能相似 |
INFINEON IRFP250NPBF 晶体管, MOSFET, N沟道, 30 A, 200 V, 75 mohm, 10 V, 4 V
|
|||
IRFP4668PBF
|
International Rectifier | 功能相似 | TO-247-3 |
INFINEON IRFP4668PBF 晶体管, MOSFET, N沟道, 130 A, 200 V, 0.008 ohm, 30 V, 5 V
|
||
IRFP4668PBF
|
Infineon | 功能相似 | TO-247-3 |
INFINEON IRFP4668PBF 晶体管, MOSFET, N沟道, 130 A, 200 V, 0.008 ohm, 30 V, 5 V
|
||
STW34NB20
|
ST Microelectronics | 类似代替 | TO-247-3 |
N - 沟道增强型MOSFET的PowerMESH N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review