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Model STW34NB20

Description N - 沟道增强型MOSFET的PowerMESH N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

Brand: ST Microelectronics

Packaging TO-247-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	200 V
Technical parameters/rated current:	34.0 A
Technical parameters/rated power:	180 W
Technical parameters/number of channels:	1
Technical parameters/drain source resistance:	75.0 mΩ
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	180W (Tc)
Technical parameters/drain source voltage (Vds):	200 V
Technical parameters/Leakage source breakdown voltage:	200 V
Technical parameters/breakdown voltage of gate source:	±30.0 V
Technical parameters/Continuous drain current (Ids):	34.0 A
Technical parameters/rise time:	40 ns
Technical parameters/Input capacitance (Ciss):	3300pF @25V(Vds)
Technical parameters/rated power (Max):	180 W
Technical parameters/descent time:	18 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	180W (Tc)
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-247-3
Dimensions/Width:	5.15 mm
Dimensions/Packaging:	TO-247-3
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Not Recommended for New Designs
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

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	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	IRFP250NPBF	IXYS Semiconductor	功能相似		INFINEON IRFP250NPBF 晶体管, MOSFET, N沟道, 30 A, 200 V, 75 mohm, 10 V, 4 V	PDF
	STW30NF20	ST Microelectronics	类似代替	TO-247-3	N沟道200V - 0.065ヘ - 30A - TO- 220 / TO- 247 / D2PAK低栅极电荷STripFET⑩功率MOSFET N-channel 200V - 0.065ヘ - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET⑩ Power MOSFET	PDF