Technical parameters/dissipated power: 90 W
Technical parameters/drain source voltage (Vds): 950 V
Technical parameters/rise time: 12 ns
Technical parameters/Input capacitance (Ciss): 450pF @100V(Vds)
Technical parameters/rated power (Max): 90 W
Technical parameters/descent time: 21 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 90W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STW19NM50N
|
ST Microelectronics | 类似代替 | TO-247-3 |
N 通道 MDmesh™,500V,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
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