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Technical parameters/number of channels: | 1 |
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Technical parameters/drain source resistance: | 0.2 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 110 W |
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Technical parameters/threshold voltage: | 4 V |
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Technical parameters/drain source voltage (Vds): | 500 V |
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Technical parameters/Leakage source breakdown voltage: | 500 V |
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Technical parameters/Continuous drain current (Ids): | 14A |
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Technical parameters/rise time: | 16 ns |
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Technical parameters/Input capacitance (Ciss): | 1000pF @50V(Vds) |
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Technical parameters/rated power (Max): | 110 W |
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Technical parameters/descent time: | 17 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/dissipated power (Max): | 110W (Tc) |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-247-3 |
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Dimensions/Length: | 15.75 mm |
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Dimensions/Width: | 5.15 mm |
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Dimensions/Height: | 20.15 mm |
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Dimensions/Packaging: | TO-247-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STW13N95K3
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ST Microelectronics | 类似代替 | TO-247-3 |
STMICROELECTRONICS STW13N95K3 功率场效应管, MOSFET, N沟道, 10 A, 950 V, 0.68 ohm, 10 V, 4 V
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