Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.68 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 190 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 950 V
Technical parameters/Continuous drain current (Ids): 10A
Technical parameters/rise time: 16 ns
Technical parameters/Input capacitance (Ciss): 1620pF @100V(Vds)
Technical parameters/rated power (Max): 190 W
Technical parameters/descent time: 21 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 190W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/length: 15.75 mm
External dimensions/width: 5.15 mm
External dimensions/height: 20.15 mm
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STW19NM50N
|
ST Microelectronics | 类似代替 | TO-247-3 |
N 通道 MDmesh™，500V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
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