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Model STW20NM65N
Description MOSFET N-CH 650V 19A TO-247
Product QR code
Brand: ST Microelectronics
Packaging TO-247-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2782) Minimum order quantity(1)
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Technical parameters/dissipated power: 160W (Tc)

Technical parameters/drain source voltage (Vds): 650 V

Technical parameters/Input capacitance (Ciss): 2500pF @50V(Vds)

Technical parameters/dissipated power (Max): 160W (Tc)

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: TO-247-3

External dimensions/packaging: TO-247-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STP24NM65N STP24NM65N ST Microelectronics 类似代替 TO-220-3
N沟道650 V - 0.16 Ω - 19 A - TO- 220 - TO- 220FP - D2PAK I2PAK - TO-247第二代的MDmesh ™功率MOSFET N-channel 650 V - 0.16 Ω - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh™ Power MOSFET
PDF
STW24NM65N STW24NM65N ST Microelectronics 类似代替 TO-247-3
N沟道650 V - 0.16 Ω - 19 A - TO- 220 - TO- 220FP - D2PAK I2PAK - TO-247第二代的MDmesh ™功率MOSFET N-channel 650 V - 0.16 Ω - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh™ Power MOSFET
PDF

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