Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 160W (Tc)
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/Continuous drain current (Ids): 19A
Technical parameters/Input capacitance (Ciss): 2500pF @50V(Vds)
Technical parameters/rated power (Max): 160 W
Technical parameters/dissipated power (Max): 160W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STW20NM65N
|
ST Microelectronics | 类似代替 | TO-247-3 |
MOSFET N-CH 650V 19A TO-247
|
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