Technical parameters/rated voltage (DC): 550 V
Technical parameters/rated current: 22.0 A
Technical parameters/drain source resistance: 140 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 160W (Tc)
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/Continuous drain current (Ids): 14.0 A, 22.0 A
Technical parameters/rise time: 23 ns
Technical parameters/Input capacitance (Ciss): 2565pF @25V(Vds)
Technical parameters/rated power (Max): 160 W
Technical parameters/descent time: 22 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 160W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STW12NK90Z
|
ST Microelectronics | 类似代替 | TO-247-3 |
STMICROELECTRONICS STW12NK90Z 功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.72 ohm, 10 V, 3.75 V
|
||
STW13NK100Z
|
ST Microelectronics | 类似代替 | TO-247-3 |
STMICROELECTRONICS STW13NK100Z 功率场效应管, MOSFET, N沟道, 13 A, 1 kV, 700 mohm, 10 V, 3.75 V
|
||
STW20NK50Z
|
ST Microelectronics | 类似代替 | TO-247-3 |
N 通道 MDmesh™ SuperMESH™，250V 至 650V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
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