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Model STW12NK90Z
Description STMICROELECTRONICS STW12NK90Z 功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.72 ohm, 10 V, 3.75 V
Product QR code
Brand: ST Microelectronics
Packaging TO-247-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
5.63  yuan 5.63yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9859) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

900 V

 

Technical parameters/rated current:

11.0 A

 

Technical parameters/rated power:

230 W

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.72 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

230 W

 

Technical parameters/threshold voltage:

3.75 V

 

Technical parameters/drain source voltage (Vds):

900 V

 

Technical parameters/Leakage source breakdown voltage:

900 V

 

Technical parameters/breakdown voltage of gate source:

±30.0 V

 

Technical parameters/Continuous drain current (Ids):

11.0 A

 

Technical parameters/rise time:

20 ns

 

Technical parameters/Input capacitance (Ciss):

3500pF @25V(Vds)

 

Technical parameters/rated power (Max):

230 W

 

Technical parameters/descent time:

55 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

230W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-247-3

 

Dimensions/Length:

15.75 mm

 

Dimensions/Width:

5.15 mm

 

Dimensions/Height:

20.15 mm

 

Dimensions/Packaging:

TO-247-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Other/Manufacturing A

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