Technical parameters/rated voltage (DC): 900 V
Technical parameters/rated current: 5.80 A
Technical parameters/rated power: 140 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 2 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 140 W
Technical parameters/threshold voltage: 3.75 V
Technical parameters/drain source voltage (Vds): 900 V
Technical parameters/leakage source breakdown voltage: 900 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 5.60 A
Technical parameters/rise time: 45 ns
Technical parameters/Input capacitance (Ciss): 1350pF @25V(Vds)
Technical parameters/rated power (Max): 140 W
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 140W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.4 mm
External dimensions/width: 4.6 mm
External dimensions/height: 9.15 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industrial, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STW12NK90Z
|
ST Microelectronics | 类似代替 | TO-247-3 |
STMICROELECTRONICS STW12NK90Z 功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.72 ohm, 10 V, 3.75 V
|
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