Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 4.00 A
Technical parameters/drain source resistance: 50.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.00 W
Technical parameters/input capacitance: 330 pF
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±16.0 V
Technical parameters/Continuous drain current (Ids): 4.00 A
Technical parameters/rise time: 100 ns
Technical parameters/Input capacitance (Ciss): 330pF @25V(Vds)
Technical parameters/rated power (Max): 2 W
Technical parameters/descent time: 22 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTMD4N03R2G
|
ON Semiconductor | 功能相似 | SOIC-8 |
N 通道 MOSFET，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
|
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