Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 1.5 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 70 W
Technical parameters/input capacitance: 545 pF
Technical parameters/drain source voltage (Vds): 525 V
Technical parameters/leakage source breakdown voltage: 525 V
Technical parameters/Continuous drain current (Ids): 4.4A
Technical parameters/rise time: 11 ns
Technical parameters/Input capacitance (Ciss): 545pF @100V(Vds)
Technical parameters/rated power (Max): 70 W
Technical parameters/descent time: 16 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 70W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD5N62K3
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD5N62K3 功率场效应管, MOSFET, N沟道, 4.2 A, 620 V, 1.28 ohm, 10 V, 3.75 V
|
||
STD5NK50Z-1
|
ST Microelectronics | 类似代替 | TO-251-3 |
STMICROELECTRONICS STD5NK50Z-1 晶体管, MOSFET, N沟道, 2.2 A, 500 V, 1.22 ohm, 10 V, 3.75 V
|
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