Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 1.22 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 70 W
Technical parameters/threshold voltage: 3.75 V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/Continuous drain current (Ids): 2.20 A
Technical parameters/rise time: 10 ns
Technical parameters/Input capacitance (Ciss): 535pF @25V(Vds)
Technical parameters/descent time: 15 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 70000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/length: 6.6 mm
External dimensions/width: 2.4 mm
External dimensions/height: 6.2 mm
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD5N62K3
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD5N62K3 功率场效应管, MOSFET, N沟道, 4.2 A, 620 V, 1.28 ohm, 10 V, 3.75 V
|
||
STU5N52K3
|
ST Microelectronics | 类似代替 | TO-251-3 |
525V,1.2Ω,4.4A,N沟道功率MOSFET
|
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