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Model STU10NM65N
Description NChannel 650 V, 0.43 Ω, 9 MDmesh? Two power MOSFET TO-220, TO-220FP, IPAK, DPAK N-channel 650 V, 0.43 Ω, 9 A MDmesh? II Power MOSFET TO-220, TO-220FP, IPAK, DPAK
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Brand: ST Microelectronics
Packaging TO-251-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3104) Minimum order quantity(1)
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Technical parameters/dissipated power: 90W (Tc)

Technical parameters/drain source voltage (Vds): 650 V

Technical parameters/Input capacitance (Ciss): 850pF @50V(Vds)

Technical parameters/dissipated power (Max): 90W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-251-3

External dimensions/packaging: TO-251-3

Physical parameters/operating temperature: 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STP10NM65N STP10NM65N ST Microelectronics 功能相似 TO-220-3
STMICROELECTRONICS STP10NM65N 功率场效应管, MOSFET, N沟道, 4.5 A, 650 V, 430 mohm, 10 V, 3 V
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