Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 430 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 90 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/Continuous drain current (Ids): 4.50 A
Technical parameters/rise time: 8 ns
Technical parameters/Input capacitance (Ciss): 850pF @50V(Vds)
Technical parameters/rated power (Max): 90 W
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 90W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.4 mm
External dimensions/width: 4.6 mm
External dimensions/height: 15.75 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STU10NM65N
|
ST Microelectronics | 功能相似 | TO-251-3 |
N沟道650 V， 0.43 Ω ， 9的的MDmesh ？二功率MOSFET TO- 220 ， TO- 220FP ， IPAK ， DPAK N-channel 650 V, 0.43 Ω, 9 A MDmesh? II Power MOSFET TO-220, TO-220FP, IPAK, DPAK
|
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