Technical parameters/polarity: NPN
Technical parameters/dissipated power: 45 W
Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/maximum allowable collector current: 2A
Technical parameters/minimum current amplification factor (hFE): 10 @500mA, 5V
Technical parameters/rated power (Max): 45 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: SOT-32-3
External dimensions/length: 7.8 mm
External dimensions/width: 2.9 mm
External dimensions/height: 11.05 mm
External dimensions/packaging: SOT-32-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUH51G
|
ON Semiconductor | 功能相似 | TO-126-3 |
TO-225 NPN 500V 3A
|
||
STT13005
|
ST Microelectronics | 功能相似 | TO-126-3 |
高压快速开关NPN功率晶体管 High voltage fast-switching NPN power transistor
|
||
STT13005D-K
|
ST Microelectronics | 类似代替 | TO-126-3 |
高压快速开关NPN功率晶体管 High voltage fast-switching NPN power transistor
|
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