Technical parameters/rated voltage (DC): 800 V
Technical parameters/rated current: 3.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 50 W
Technical parameters/gain bandwidth product: 23 MHz
Technical parameters/breakdown voltage (collector emitter): 500 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 8 @1A, 1V
Technical parameters/rated power (Max): 50 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-126-3
External dimensions/length: 7.74 mm
External dimensions/width: 2.66 mm
External dimensions/height: 11.04 mm
External dimensions/packaging: TO-126-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STT13005
|
ST Microelectronics | 功能相似 | TO-126-3 |
高压快速开关NPN功率晶体管 High voltage fast-switching NPN power transistor
|
||
STT13005D-K
|
ST Microelectronics | 功能相似 | TO-126-3 |
高压快速开关NPN功率晶体管 High voltage fast-switching NPN power transistor
|
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