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Model STS10PF30L
Description PSTripFET II Power MOSFET P-CHANNEL 30V -0.012Ohm-10A SO-8 STripFET II POWER MOSFET
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Brand: ST Microelectronics
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1597) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): -30.0 V

Technical parameters/rated current: -10.0 A

Technical parameters/drain source resistance: 14.0 mΩ

Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 2.5 W

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/leakage source breakdown voltage: 30.0 V

Technical parameters/breakdown voltage of gate source: ±16.0 V

Technical parameters/Continuous drain current (Ids): 10.0 A

Technical parameters/rise time: 87 ns

Technical parameters/Input capacitance (Ciss): 2300pF @25V(Vds)

Technical parameters/rated power (Max): 2.5 W

Technical parameters/descent time: 27 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 2.5W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/length: 5 mm

External dimensions/width: 4 mm

External dimensions/height: 1.65 mm

External dimensions/packaging: SOIC-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

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