Technical parameters/rated current: 7.00 A
Technical parameters/polarity: N+P
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 7.00 A
Technical parameters/rise time: 35.0 ns
Technical parameters/Input capacitance (Ciss): 1050pF @25V(Vds)
Technical parameters/rated power (Max): 2 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4542DY
|
Vishay Siliconix | 功能相似 | SOT |
FAIRCHILD SEMICONDUCTOR SI4542DY 双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 0.019 ohm, 10 V, 1.5 V
|
||
SI4542DY
|
Vishay Intertechnology | 功能相似 |
FAIRCHILD SEMICONDUCTOR SI4542DY 双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 0.019 ohm, 10 V, 1.5 V
|
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