Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 13 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3 W
Technical parameters/threshold voltage: 3.75 V
Technical parameters/input capacitance: 94 pF
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 400 mA
Technical parameters/rise time: 5 ns
Technical parameters/Input capacitance (Ciss): 94pF @25V(Vds)
Technical parameters/rated power (Max): 3 W
Technical parameters/descent time: 28 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 4.8 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, Power Management, Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STQ1NK60ZR
|
ST Microelectronics | 功能相似 | TO-92 |
N沟道600V 13 OHM 0.8A TO-92 / IPAK / SOT- 223齐纳保护超网MOSFET N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET
|
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