Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 0.3A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STQ1NK60ZR-AP
|
ST Microelectronics | 功能相似 | TO-92-3 |
STMICROELECTRONICS STQ1NK60ZR-AP 功率场效应管, MOSFET, N沟道, 400 mA, 600 V, 13 ohm, 10 V, 3.75 V
|
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